Piezo‐Semiconductor Coupled Model for the Simulation of Zinc Oxide 1–3 Piezo‐Composite

Abstract Semiconducting effects in zinc oxide nanowires‐based nanogenerators greatly impact their performances. A coupled model integrating piezoelectric and semiconducting properties is developed with a finite element method to better understand the phenomena involved this kind of device made process including chemical bath deposition nanostructures polymer encapsulation. Free carriers surface traps are taken into account give some keys explain differences between previous theoretical experimental works. This first validated on single nanowire 10 16 cm −3 n‐doping level by comparison analytical calculations. For comparison, not as no solution available considering them. Second, levels (between 12 18 ) densities 8 −2 lead variations generated piezopotential two orders magnitude. The control these real challenge for application. Furthermore, simulation results show that benefic effect 1–3 piezo‐composite still present even high .